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MJ15003 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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MJ15003 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 4 page FEATURES applications. DC current gain-h = 25 (Min) @ l = 5 Adc FE C High safe operation area (100% tested) 250W @ 50V DESCRIPTION SEMICONDUCTOR RoHS RoHS Complementary Silicon power transistors Nell High Power Products MJ15004(PNP) (20A / 140V / 250W) ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified) C UNIT PD Tstg PARAMETER ºC 5 20 Collector current - continuous Base current - continuous Total power dissipation Junction temperature Designed for general-purpose switching and amplifier 140 140 250 5 VALUE VCBO Tj -65 to 200 200 Collector to base voltage (I = 0) E Emitter to base voltage SYMBOL VCEO VEBO IC IB T = 25°C C Storage temperature W Page 1 of 4 www.nellsemi.com THERMAL CHARACTERISTICS (T = 25°C unless otherwise specified) C UNIT PARAMETER 0.7 VALUE Rth(j-c) Thermal resistance, junction to case SYMBOL ºC/W MJ15003(NPN) For low distortion complementary designs The MJ15003 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is designed for high power audio, disk head positioners and other linear applications. The complementary PNP type is MJ15004. Collector to emitter voltage (I = 0) B All dimensions in millimeters INTERNAL SCHEMATIC DIAGRAM 26.00 Max. 10.90 2- 4.0 Thru. Φ 13.10 Max. 8.60 1.60 C B E (TAB) (2) (1) C B (TAB) (1) E (2) 1 2 TO-3 TAB *For PNP types voltage and current values are negative. Derate above 25ºC W/ºC 1.43 Vdc Adc IE Emitter current - continuous 25 Maximum lead temperature for soldering purposes : 1/16” from case for ≤ 10 seconds TL 265 ºC 1 2 MJ15004(PNP) MJ15003(NPN) |
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