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FQB9N50C Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FQB9N50C
Description  N-Channel QFET짰 MOSFET 500 V, 9 A, 800 m廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQB9N50C Datasheet(HTML) 1 Page - Fairchild Semiconductor

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November 2013
©2003 Fairchild Semiconductor Corporation
FQB9N50C Rev. C1
www.fairchildsemi.com
1
Absolute Maximum Ratings T
C = 25°C unless otherwise noted.
Thermal Characteristics
Symbol
Parameter
FQB9N50CTM
Unit
VDSS
Drain-Source Voltage
500
V
ID
Drain Current
- Continuous (TC = 25°C)
9A
- Continuous (TC = 100°C)
5.4
A
IDM
Drain Current
- Pulsed
(Note 1)
36
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
360
mJ
IAR
Avalanche Current
(Note 1)
9A
EAR
Repetitive Avalanche Energy
(Note 1)
13.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
135
W
- Derate above 25°C
1.07
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQB9N50CTM
Unit
RθJC
Thermal Resistance, Junction-to-Case, Max.
0.93
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
FQB9N50C
N-Channel QFET® MOSFET
500 V, 9 A, 800 mΩ
Features
• 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 24 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
G
S
D
D2-PAK
G
S
D


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