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2N1893 Datasheet(PDF) 1 Page - Continental Device India Limited

Part No. 2N1893
Description  NPN SILICON PLANAR TRANSISTORS
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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NPN SILICON PLANAR TRANSISTORS
2N 1893
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
UNITS
Collector Emitter Voltage
VCEO
80
V
Collector Emitter Voltage
VCER
100
V
Collector Base Voltage
VCBO
120
V
Emitter Base Voltage
VEBO
7.0
V
Collector Current Continuous
IC
0.5
A
Total DeviceDissipation @ Ta=25ºC
PD
0.8
W
Derate Above 25ºC
4.57
mW/ºC
Total Deivice Dissipation@ Tc=25ºC
PD
3.0
W
Derate Above 25ºC
17.2
mW/ºC
Operating And Storage Junction
Tj, Tstg
-65 to +200
ºC
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
219
ºC/W
Junction to Case
Rth(j-c)
58.3
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNITS
Collector Emitter Breakdown Voltage
BVCER(sus)
IC=100mA,RBE =10Ω
100
V
Collector Emitter Sustaining Voltage
BVCEO(sus) *IC=10mA, IB=0
80
V
Collector Base Breakdown Voltage
BVCBO
IC=100µA, IE=0
120
V
Emitter Base Breakdown Voltage
BVEBO
IE =100µA, IC=0
7.0
V
Collector Cutoff Current
ICBO
VCB=90V, IE=0
10
nA
VCB=90V, IE=0,TA=150ºC
15
µA
Emitter Cutoff Current
IEBO
VEB=5V,IC=0
10
nA
DC Current Gain
hFE*IC=1mA,VCE=10V
20
IC=10mA,VCE=10V
35
IC=10mA,VCE=10V
20
TC=-55ºC
IC=150mA,VCE=10V
40
120
Collector Emitter (Sat) Voltage
VCE(Sat)
IC=50mA,IB=5.0mA
1.2
V
IC=150mA,IB=15mA
5.0
V
Base Emitter (Sat) Voltage
VBE(Sat)
IC=50mA,IB=5.0mA
0.9
V
IC=150mA,IB=15mA
1.3
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company




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