ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

2N2218A to 2N2219A

DESCRIPTION

SYMBOL TEST CONDITION

2218A

2219A

UNIT

DC Current Gain

hFE

IC=0.1mA,VCE=10V

>20

>35

IC=1mA,VCE=10V

>25

>50

IC=10mA,VCE=10V

>35

>75

Ta=55 deg C

IC=10mA,VCE=10V

>15

>35

IC=150mA,VCE=10V

40-120

100-300

IC=150mA,VCE=1V

>20

>50

IC=500mA,VCE=10V

>25

>40

DYNAMIC CHARACTERISTICS

ALL f=1kHz

Small Signal Current Gain

hfe

IC=1mA, VCE=10V

30-150

50-300

IC=10mA, VCE=10V

50-300

75-375

Input Impedance

hie

IC=1mA, VCE=10V

1.0-3.5

2.0-8.0

kohms

IC=10mA, VCE=10V

0.2-1.0 0.25-1.25

Voltage Feedback Ratio

hre

IC=1mA, VCE=10V

<5.0

<8.0

x10-4

IC=10mA, VCE=10V

<2.5

<4.0

Out put Admittance

hoe

IC=1mA, VCE=10V

3.0-15

5.0-35

umhos

IC=10mA, VCE=10V

10-100

25-200

Collector Base Time Constant

rb'Cc

IE=20mA, VCB=20V

<150

<150

ps

f=31.8MHz

Real Part Common-Emitter High Frequency

Re(hie)

IC=20mA, VCE=20V

<60

<60

ohms

Input Impedance

f=300MHz

Noise Figure

NF

IC=100uA, VCE=10V

-

<4.0

dB

Rs=1kohms, f=1kHz

DYNAMIC CHARACTERISTICS

Transistors Frequency

ft

IC=20mA, VCE=20V

>250

>300

MHz

f=100MHz

Out-Put Capacitance

Cob

VCB=10V, IE=0

<8.0

<8.0

pF

f=100kHz

Input Capacitance

Cib

VEB=0.5V, IC=0

<25

<25

pF

f=100kHz

SWITCHING Time

Delay time

td

IC=150mA,IB1=15mA

<10

ns

Rise time

tr

VCC=30V,VBE=0.5V

-

<25

ns

Storage time

ts

IC=150mA, IB1=

<225

ns

Fall time

tf

IB2=15mA, VCC=30V

-

<60

ns

*Pulse Condition: Pulse Width=300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

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