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2N2102 Datasheet(PDF) 1 Page - Continental Device India Limited

Part No. 2N2102
Description  NPN SILICON PLANAR TRANSISTOR
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage, RBE < 10Ω
VCER
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
PD
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
Tj, Tstg
THERMAL RESISTANCE
Junction to Ambient in free air
**Rth (j-a)
Junction to Case
Rth (j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter Voltage
VCER
IC=1mA, RBE=10 Ω
80
V
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
65
V
Collector Emitter Voltage
VCEX
IC=100µA, VEB=1.5V
120
V
Collector Base Voltage
VCBO
IC=100µA, IE=0
120
V
Emitter Base Voltage
VEBO
IE=100µA, IC=0
7
V
Collector Cut Off Current
ICBO
VCB=60V, IE=0
2
nA
VCB=60V, IE=0, Ta=150ºC
2
µA
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
2
nA
DC Current Gain
hFE
IC=0.1mA, VCE=10V
20
*IC=10mA, VCE=10V
35
*IC=10mA, VCE=10V, Ta=55ºC
20
*IC=150mA, VCE=10V
40
120
*IC=500mA, VCE=10V
25
*IC=1A, VCE=10V
10
*Pulse Test: Pulse Width < 300
µµs, Duty Cycle < 2%
**Rth (j-a) is measured with the device soldered into a typical printed circuit board
2N2102Rev_1 040904E
UNIT
V
V
V
A
mW
mW/ ºC
W
1.0
VALUE
65
120
7.0
80
V
ºC/W
1.0
175
5.71
5.0
35
ºC/W
28.6
- 65 to +200
mW/ ºC
ºC
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company




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