STP10NM60ND datasheet(4/19 Pages) STMICROELECTRONICS

Part #	STP10NM60ND

Description	N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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4 / 19 page

Electrical characteristics

STD10NM60ND, STF10NM60ND, STP10NM60ND

4/19

Doc ID 18467 Rev 2

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC =125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 4 A

0.57

0.6

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

577

32.4

1.76

-

pF

Coss eq

(1)

1.

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

-

138

-

pF

Rg

Gate input resistance

f=1 MHz open drain

-

6

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 8 A,

VGS = 10 V

(see Figure 19)

-

20

4.3

11.6

-

nC

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 300 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

9.2

10

32

9.8

-

ns

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