2SJ356 datasheet(3/6 Pages) NEC

Part #	2SJ356

Description	P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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2SJ356

3

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

–0.001

1

0.8

0.6

0.4

0.2

0

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0

1

0.8

0.6

0.4

0.2

VGS - Gate to Source Voltage - V

–10

–0.01

–0.1

–1

VGS = –10 V

Pulsed

TA = 150 ˚C

TA = 75 ˚C

TA = 25 ˚C

TA = 0 ˚C

TA = –25 ˚C

–20

–2

–4

–6

–8 –10 –12 –14 –16 –18

ID = 2.0 A

ID = 1.0 A

Pulsed

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

0

–5

VDS - Drain to Source Voltage - V

TRANSFER CHARACTERISTICS

–1

–10

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

–0.0001

10

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

–0.001

1.5

ID - Drain Current - A

Pulsed

–1

–2

–3

–4

–5

–4

–3

–2

–1

–10

V

–4.5

V

–4.0 V

–3.5 V

–3.0 V

–2.5 V

VGS = –2.0 V

–2

–3

–4

–1

–0.1

–0.01

–0.001

–0.0001

–0.00001

VDS = –10 V

Pulsed

TA = 150 ˚C

TA = –25 ˚C

TA = 25 ˚C

TA = 75 ˚C

1

0.1

0.01

0.001

–0.001

–0.01

–0.1

–1

TA = –25 ˚C

TA = 0 ˚C

TA = 25 ˚C

TA = 75 ˚C

TA = 150˚C

VGS = –4 V

Pulsed

1

0.5

0

–0.01

–0.1

–1

–10

TA = 150 ˚C

TA = 75 ˚C

TA = 25 ˚C

TA = 0 ˚C

TA = –25 ˚C

VDS = –10 V

Pulsed

TA = 0 ˚C

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