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PTB20074 Datasheet(PDF) 1 Page - Ericsson |
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PTB20074 Datasheet(HTML) 1 Page - Ericsson |
1 / 2 page e 1 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.4 Adc Total Device Dissipation at Tflange = 25°C PD 25 Watts Above 25°C derate by 0.14 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 7.0 °C/W PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 14 watts, 1.477–1.501 GHz Class AB Characteristics 30% Collector Efficiency at 10 watts Gold Metallization Silicon Nitride Passivated Package 20201 20074 LOT CODE 0 5 10 15 20 01 234 Input Power (Watts) VCC = 26 V ICQ = 50 mA f = 1.501 GHz Typical Output Power vs. Input Power 9/28/98 |
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