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2N5192 Datasheet(PDF) 2 Page - Continental Device India Limited |
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2N5192 Datasheet(HTML) 2 Page - Continental Device India Limited |
2 / 4 page NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT DC Current Gain hFE * IC=1.5A, VCE=2V 2N5191 25 - 100 2N5192 20 - 80 IC=4A, VCE=2V 2N5191 10 - - 2N5192 7- - Transition frequency fT IC=1A, VCE=10V 2 - - MHz *Pulsed Pulse Duration=300 µs, Duty Cycle=1.5% B C E Continental Device India Limited Data Sheet Page 2 of 4 |
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