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2N5232 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N5232 Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 4 page NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N5232 2N5232A TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 70 V Emitter Base Voltage VEBO 5V Collector Current IC 100 mA Power Dissipation @ Ta=25ºC PT (1) 360 mW Storage Temperature Tstg - 55 to +150 ºC Junction Temperature Tj +125 ºC Lead Soldering, 1/16" + 1/32" from TL +260 ºC Case for 10 seconds maximum ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Voltage BVCEO** IC=10mA, IB=0 50 V Collector Base Voltage BVCBO IC=10µA, IE=0 70 V Emitter Base Voltage BVEBO IE=10µA, IC=0 5V Collector Cut Off Current ICBO VCB=50V, IE = 0 30 nA Ta= 100ºC VCB=50V, IE = 0 10 µA Collector Cut Off Current ICES VCE=50V, VBE = 0 30 nA Emitter Cut Off Current IEBO VEB=5V, IC = 0 50 nA Collector Emitter Saturation Voltage VCE(sat) (2) IC=10mA, IB=1mA 0.125 V Base Emitter Saturation Voltage VBE(sat) (2) IC=10mA, IB=1mA 0.780 V Base Emitter On Voltage VBE(on) VCE=10V, IC=2mA 0.5 0.900 V DC Current Gain hFE VCE=5V, IC=0.1mA 170 (3) VCE=5V, IC=2mA 250 500 (1) Derate by 3.6mW/ºC in case of increase in ambient temperature above 25ºC (2) Pulse conditions: 300 µs duration, 2% duty cycle. (3)Typically, a minimum of 95% of the distribution is above this value. Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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