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2N5296 Datasheet(PDF) 2 Page - Continental Device India Limited |
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2N5296 Datasheet(HTML) 2 Page - Continental Device India Limited |
2 / 4 page Continental Device India Limited Data Sheet Page 2 of 4 RATINGS (at TA=25°C unless otherwise specified) Limiting values 5294 5296 5298 Collector-base voltage (open emitter) VCBO max. 80 60 80 V Collector-emitter voltage (open base) VCEO max. 70 40 60 V Collector-emitter voltage (VBE = 1.5V) VCEV max. 80 60 80 V Collector-emitter voltage (RBE = 100Ω)VCER max. 75 50 70 V Emitter-base voltage (open base) VEBO max. 7.0 5.0 5.0 V Collector current IC max. 4.0 A Base current IB max. 2.0 A Total power dissipation up to TC = 25°C Ptot max. 36 W Derate above 25°C max. 0.288 W/° C Total power dissipation up to TA = 25°C Ptot max. 1.8 W Derate above 25°C max. 0.0144 W/°C Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 °C THERMAL RESISTANCE From junction to ambient Rth j–a 70 ° C/W From junction to case Rth j–c 3.5 ° C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified 5294 5296 5298 Collector cutoff current VCE = 65 V; VBE = 1.5 V ICEV max. 0.5 – 0.5 mA VCE = 35 V; VBE = 1.5 V ICEV max. – 2.0 – mA VCE = 65 V; VBE = 1.5 V; TC = 150°C ICEV max. 3.0 – 3.0 mA VCE = 35 V; VBE = 1.5 V; TC = 150°C ICEV max. – 5.0 – mA VCE = 50 V; RBE = 100 Ω ICER max. 0.5 – 0.5 mA VCE = 50 V; RBE = 100 Ω; TC = 150°C ICER max. 2.0 – 2.0 mA Emitter cut-off current IC = 0; VEB = 7 V IEBO max. 1.0 – – mA IC = 0; VEB = 5 V IEBO max. – 1.0 1.0 mA Breakdown voltages IC = 100 mA; IB = 0 VCEO(sus)* min. 70 40 60 V IC = 1 mA; IE = 0 VCBO min. 80 60 80 V IE = 1 mA; IC = 0 VEBO min. 7 5 5 V Saturation voltages IC = 0.5 A; IB = 0.05 A VCEsat* max. 1.0 – – V IC = 1 A; IB = 0.1 A VCEsat* max. – 1.0 – V IC = 1.5 A; IB = 0.15 A VCEsat* max. – – 1.0 V Base-emitter on voltage IC = 0.5 A; VCE = 4 V VBE(on)* max. 1.1 – – V IC = 1 A; VCE = 4 V VBE(on)* max. – 1.3 – V IC = 1.5 A; VCE = 4 V VBE(on)* max. – – 1.5 V 2N5294, 2N5296, 2N5298 |
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