e

1

0.0

2.5

5.0

7.5

10.0

12.5

15.0

0.2

0.4

0.6

0.8

1.0

1.2

Input Power (Watts)

f = 960 MHz

Typical Output Power vs. Input Power

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

40

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage (collector open)

4.0

Vdc

Collector Current (continuous)

6.7

Adc

Total Device Dissipation at Tflange = 25°C

65

Watts

Above 25°C derate by

0.4

W/°C

Storage Temperature Range

T

STG

–40 to +150

°C

Thermal Resistance (Tflange = 70°C)

2.7

°C/W

PTB 20008

10 Watts, 935–960 MHz

Cellular Radio RF Power Transistor

Description

The 20008 is a class AB, NPN, common emitter RF power transistor

intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization ensure excellent device reliability. 100% lot traceability

is standard.

Package 20201

20008

LOT

CODE

9/28/98