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PTB20008 Datasheet(PDF) 1 Page - Ericsson |
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PTB20008 Datasheet(HTML) 1 Page - Ericsson |
1 / 3 page e 1 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0.2 0.4 0.6 0.8 1.0 1.2 Input Power (Watts) VCC = 24 V ICQ = 100 mA f = 960 MHz Typical Output Power vs. Input Power Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 6.7 Adc Total Device Dissipation at Tflange = 25°C PD 65 Watts Above 25°C derate by 0.4 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.7 °C/W PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Package 20201 20008 LOT CODE 9/28/98 |
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