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PTB20004 Datasheet(PDF) 1 Page - Ericsson |
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PTB20004 Datasheet(HTML) 1 Page - Ericsson |
1 / 3 page e 1 0 10 20 30 40 50 60 02468 10 Input Power (Watts) VCC = 25 V ICQ = 200 mA f = 900 MHz Typical Output Power vs. Input Power Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 10.0 Adc Total Device Dissipation at Tflange = 25°C PD 175 Watts Above 25°C derate by 1.0 W/°C Storage Temperature Range T STG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.0 °C/W PTB 20004 50 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 50 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold Metallization Silicon Nitride Passivated Package 20200 20004 LOT CODE 9/28/98 |
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