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2N6111 Datasheet(PDF) 2 Page - Continental Device India Limited |
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2N6111 Datasheet(HTML) 2 Page - Continental Device India Limited |
2 / 3 page Continental Device India Limited Data Sheet Page 2 of 3 Collector current (Peak value) IC max. 10 A Base current IB max. 3.0 A Total power dissipation up to TC = 25°C Ptot max. 40 W Derate above 25°C max. 0.32 W/°C Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC THERMAL RESISTANCE From junction to case Rth j–c = 3.125 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCE = 20V ICEO max. 1.0 mA VEB(off) = 1.5V; VCE = 40V ICEX max. 0.1 mA VEB(off) = 1.5V; VCE = 30V; TC = 150°C ICEX max. 2.0 mA Emitter cut-off current IC = 0; VEB = 5V IEBO max. 1.0 mA Breakdown voltages IC = 100 mA; IB = 0 VCEO(sus)* min. 30 V IC = 1 mA; IE = 0 VCBO min. 40 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 3A; IB = 0.3A VCEsat* max. 1.0 V IC = 7 A; IB = 3 A VCEsat* max. 3.5 V Base emitter on voltage IC = 3 A; VCE = 4V VBE(on)* max. 1.5 V IC = 7 A; VCE = 4V VBE(on)* max. 3.0 V D.C. current gain IC = 3A; VCE = 4V hFE* min. 30 max. 150 IC = 7A; VCE = 4V hFE* min. 2.3 Small-signal current gain f = 50 KHz IC = 0.5A; VCE = 4V hfe min. 20 Output capacitance at f = 1 MHz IE = 0; VCB = 10V Co max. 250 pF Transition frequency at f = 1 MHz IC = 500 mA; VCE = 4V fT (1) min. 10 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (1) fT = |hfe|• ftest 2N6111 |
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