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SMUN5212DW Datasheet(PDF) 8 Page - SeCoS Halbleitertechnologie GmbH |
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SMUN5212DW Datasheet(HTML) 8 Page - SeCoS Halbleitertechnologie GmbH |
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8 / 8 page  TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5214DW I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C V R , REVERSE BIAS VOLTAGE (VOLTS) Figure 19. Output Capacitance I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current I C , COLLECTOR CURRENT (mA) Figure 18. DC Current Gain V in , INPUT VOLTAGE (VOLTS) Figure 20. Output Current versus Input oltage 1 0.1 0.01 0.001 020 40 60 80 300 250 200 150 100 50 0 1 2 3 4 5 10 15 20 40 5060 7080 90 100 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 1015 20 25 30 35 40 4550 100 10 1 01 2 3 4 5 6 7 8 9 10 10 1 0.1 010 20 30 40 50 Any changing of specification will not be informed individual SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 22-Jun-2007 Rev. A Page 8 of 8 |
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