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FQI50N06TU Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQI50N06TU Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page October 2013 www.fairchildsemi.com 1 Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter FQB50N06 TM / FQI50N06TU Unit VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 50 A - Continuous (TC = 100°C) 35.4 A IDM Drain Current - Pulsed (Note 1) 200 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TA = 25°C) * 3.75 W Power Dissipation (TC = 25°C) 120 W - Derate above 25°C 0.8 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C FQB50N06 / FQI50N06 N-Channel QFET® MOSFET This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 50 A , 60 V, RDS(on) = 22 mΩ (Max.) @VGS = 10 V, ID = 25 A • Low Gate Charge ( Typ. 31 nC) • Low Crss (Typ. 65 pF) • 100% Avalanche Tested • 175 °C Maximum Junction Temperature Rating 60 V, 50 A, 22 mΩ Description GD S I2-PAK G S D D2-PAK G S D Thermal Characteristics Symbol Parameter Unit RJC Thermal Resistance, Junction to Case, Max . 1.24 oC/W RJA Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 Thermal Resistance, Junction to Ambient ( * 1 in2 pad of 2 oz copper), Max. 40 FQB50N06 TM FQI50N06 TU © 2000 Fairchild Semiconductor Corporation FQB50N06 / FQI50N06 Rev. C1 |
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