October 2013

www.fairchildsemi.com

1

Symbol

Parameter

FQB50N06

TM / FQI50N06TU

Unit

Drain-Source Voltage

60

V

Drain Current

50

A

35.4

A

Drain Current

- Pulsed

(Note 1)

200

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

490

mJ

Avalanche Current

(Note 1)

50

A

Repetitive Avalanche Energy

(Note 1)

12

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7.0

V/ns

3.75

W

120

W

- Derate above 25°C

0.8

W/°C

Operating and Storage Temperature Range

-55 to +175

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

FQB50N06 / FQI50N06

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, audio amplifier,

DC motor control, and variable switching power applications.

Features

•

• Low Gate Charge (

Typ. 31 nC)

• Low Crss

(Typ. 65 pF)

• 100% Avalanche Tested

• 175

°C Maximum Junction Temperature Rating

60 V, 50 A, 22 mΩ

Description

GD

S

G

S

D

G

S

D

Thermal Characteristics

Symbol

Parameter

Unit

Thermal Resistance, Junction to Case, Max

.

1.24

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

62.5

Thermal Resistance, Junction to Ambient (

40

FQB50N06

TM

FQI50N06

TU

©

2000 Fairchild Semiconductor Corporation

FQB50N06 / FQI50N06 Rev. C1