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AP2171D Datasheet(PDF) 4 Page - Diodes Incorporated |
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AP2171D Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 19 page AP2161D/AP2171D Document number: DS32250 Rev. 5 - 2 4 of 19 www.diodes.com March 2013 © Diodes Incorporated AP2161D/AP2171D Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max Unit VUVLO Input UVLO 1.6 1.9 2.5 V ISHDN Input Shutdown Current Disabled, IOUT = 0 0.5 1 µA IQ Input Quiescent Current Enabled, IOUT = 0 45 70 µA ILEAK Input Leakage Current Disabled, OUT grounded 0.1 1 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 0.1 1 µA RDS(ON) Switch On-Resistance VIN = 5V, IOUT= 1A TA = +25°C SOT25, MSOP-8, MSOP-8EP, SO-8 95 115 m Ω U-DFN2018-6 90 110 -40°C ≤ TA ≤ +85°C 140 VIN = 3.3V, IOUT= 1A TA = +25°C 120 140 -40°C ≤ TA ≤ +85°C 170 ISHORT Short-Circuit Current Limit Enabled into short circuit, CL = 22µF 1.2 A ILIMIT Over-Load Current Limit VIN = 5V, VOUT = 4.0V, CL = 120µF, -40°C ≤ TA ≤ +85°C 1.1 1.5 1.9 A ITrig Current Limiting Trigger Threshold Output Current Slew rate (<100A/s) , CL = 22µF 2.0 A VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ISINK EN Input Leakage VEN = 5V 1 µA TD(ON) Output Turn-On Delay Time CL = 1µF, RLOAD = 10Ω 0.05 ms TR Output Turn-On Rise Time CL = 1µF, RLOAD = 10Ω 0.6 1.5 ms TD(OFF) Output Turn-Off Delay Time CL = 1µF, RLOAD = 10Ω 0.05 ms TF Output Turn-Off Fall Time CL = 1µF, RLOAD = 10Ω 0.05 0.1 ms RFLG FLG Output FET On-Resistance IFLG = 10mA 20 40 Ω TBlank FLG Blanking Time CIN = 10µF, CL = 22µF 4 7 15 ms RDIS Discharge Resistance (Note 5) VIN = 5V, disabled, IOUT = 1mA 100 Ω TDIS Discharge Time CL = 1µF, VIN = 5V, disabled to VOUT < 0.5V 0.6 ms TSHDN Thermal Shutdown Threshold Enabled, RLOAD = 1kΩ 140 °C THYS Thermal Shutdown Hysteresis 25 °C θJA Thermal Resistance Junction-to- Ambient SOT25 (Note 6) 170 °C/W SO-8 (Note 6) 127 MSOP-8 (Note 6) 118 MSOP-8EP (Note 7) 67 U-DFN2018-6 (Note 7) 70 Notes: 5. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for the external storage capacitor. 6. Device mounted on FR-4 4 substrate PCB, 2oz copper, with minimum recommended pad layout. 7. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. |
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