AOB4S60L datasheet(4/6 Pages) AOSMD

Part #	AOB4S60L

Description	600V 4A a MOS TM Power Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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4 / 6 page

AOT4S60/AOB4S60/AOTF4S60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

3

6

9

12

15

0

2

4

6

8

10

Qg (nC)

Figure 8: Gate-Charge Characteristics

VDS=480V

ID=2A

0

1

10

100

1000

10000

0

100

200

300

400

500

600

VDS (Volts)

Figure 9: Capacitance Characteristics

Ciss

Coss

Crss

0.01

0.1

1

10

100

1

10

100

1000

VDS (Volts)

Figure 11: Maximum Forward Biased Safe

Operating Area for AOT(B)4S60 (Note F)

10

µs

10ms

1ms

DC

RDS(ON)

limited

TJ(Max)=150°C

TC=25°C

100

µs

0.01

0.1

1

10

100

0.1

1

10

100

1000

VDS (Volts)

Figure 12: Maximum Forward Biased Safe

Operating Area for AOTF4S60(Note F)

10

µs

10ms

1ms

0.1s

DC

RDS(ON)

limited

TJ(Max)=150°C

TC=25°C

100

µs

1s

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)

Figure 7: Body-Diode Characteristics (Note E)

25°C

125°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

100

200

300

400

500

600

VDS (Volts)

Figure 10: Coss stored Energy

Eoss

Rev 1: Jan 2012

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Page 4 of 6

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