NTMFD4901NFT3G datasheet(6/12 Pages) ONSEMI

Part #	NTMFD4901NFT3G

Description	Dual N-Channel Power MOSFET with Integrated Schottky

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NTMFD4901NF

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TYPICAL CHARACTERISTICS − Q1

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

4

3

2

1

0

10

20

25

5

30

4

3

2

1

0

5

10

25

30

40

50

Figure 3. On−Resistance vs. Gate−to−Source

Resistance

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

9

810

7

6

5

4

2

0.002

0.006

0.008

0.010

0.014

0.016

0.020

30

25

20

10

5

0

0.003

0.004

0.005

0.006

0.008

0.009

0.010

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.6

1.2

1.4

1.6

1.8

30

25

20

15

10

0

10

100

1,000

10,000

15

35

40

TJ = 25°C

VGS = 2.4 V

3.0 V

3.2 V

2.8 V

4.5 V

10 V

TJ = 25°C

VDS ≥ 5 V

TJ = 125°C

TJ = −55°C

15

20

35

45

0.004

0.012

0.018

ID = 10 A

TJ = 25°C

15

40

35

0.007

T = 25

°C

VGS = 4.5 V

VGS = 10 V

150

ID = 10 A

VGS = 10 V

0.8

1.0

VGS = 0 V

TJ = 125°C

TJ = 150°C

3

5

3.4 V

3.6 V

3.8 V

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NTMFD4901NFT3G Datasheet(PDF) 6 Page - ON Semiconductor

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