High Power PIN Diode

50 MHz - 12 GHz

Rev. V1

MADP-011027-14150T

2

2

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

2

Absolute Maximum Ratings

9,10

Parameter

Absolute Maximum

D.C. Forward Voltage @

+250 mA

1.2 V

D.C. Forward Current

250 mA

D.C. Reverse Voltage

|-100V|

+175°C

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +150°C

Re-flow Temperature

+260°C for 360 seconds

9. Exceeding any one or combination of these limits may cause

permanent damage to this device.

10. M/A-COM Technology Solutions does not recommend

sustained operation near these survivability limits.

MTTF > 1 x 10E6 hours.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Forward Voltage

+50 mA D.C.

V

0.7

0.9

1.1

Reverse Leakage Current

-100 V D.C.

ηA

—

|- 20|

|-1000|

-50 V @ 1 MHz

pF

—

0.24

0.35

+10 mA @ 1 GHz

Ω

—

1.9

2.6

-Vdc = -40 V, @ 100 MHz

KΩ

—

500

—

Minority Carrier Lifetime

+If = 10 mA / -Ir = -6 mA

(50% Control Voltage, 90% Output Voltage)

µS

—

1.0

2.0

C.W. Thermal Resistance

( Infinite Heat Sink at Thermal

Ground Plane)

IHigh = 4 A, Ilow = 10 mA @ 10 kHz

ºC/W

—

45

—

( Infinite Heat Sink at Thermal

Ground Plane)

+If = 50 mA @ 1 GHz

W

—

3.3

—

Insertion Loss

F = 1 GHz, -Vdc = -10 V

dB

-0.1

Isolation

F = 1 GHz, +Ibias = +10 mA

dB

-23

-21

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These devices are sensitive to electrostatic

discharge (ESD) and can be damaged by static

electricity. Proper ESD control techniques should

be used when handling these Class 2 devices.

5. Ct (Total Capacitance) = CJ (Junction Capacitance) + Cp (Parasitic Package Capacitance).

6. Rs and Rp are measured on an HP4291A Impedance Analyzer.

7. De-rate power dissipation linearly by -22.2 mW/ºC to 0 W @ +175ºC: Pd (T) = Pd (+25ºC) - ∆P = Pd (+25º) - (22.2 mV/ºC) (∆T).

8. PD = ∆Tj / Θ or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.