VS-10UT10, VS-10WT10FN

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Vishay Semiconductors

Revision: 02-Nov-11

2

Document Number: 94647

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

Forward voltage drop

5 A

0.630

-

V

10 A

0.735

0.810

20 A

0.840

0.890

5 A

0.530

-

10 A

0.615

0.660

20 A

0.730

0.770

Reverse leakage current

-50

μA

-

4

mA

Junction capacitance

400

-

pF

Series inductance

Measured lead to lead 5 mm from package body

8.0

-

nH

Maximum voltage rate of change

dV/dt

-

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

- 55 to 175

°C

Maximum thermal resistance,

junction to case

DC operation

2

°C/W

Typical thermal resistance,

case to heatsink

0.3

Approximate weight

0.3

g

0.01

oz.

Marking device

Case style I-PAK

10UT10

Case style D-PAK

10WT10FN

0.2

0.4

0.6

0.8

1.0

1.2

1.6

1.4

1.8

1

100

10

T

T

T

020

40

60

80

100

0.0001

0.001

0.01

0.1

1

10

100

25 °C

175 °C

150 °C

125 °C

100 °C

75 °C

50 °C