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STS5DNF60L Datasheet(PDF) 5 Page - STMicroelectronics |
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STS5DNF60L Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STS5DNF60L Electrical characteristics Doc ID 14509 Rev 2 5/12 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 5 20 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 4 A, VGS = 0 - 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD = 20 V (see Figure 17) - 85 85 2 ns nC A |
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