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STP77N6F6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP77N6F6 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page DocID024067 Rev 2 3/13 STP77N6F6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID (1) 1. This value is rated according to Rthj-c Drain current (continuous) at Tc = 25 °C 77 A ID (1) Drain current (continuous) at Tc = 100 °C 55 A IDM (2) 2. Pulse width is limited by safe operating area Drain current (pulsed) 308 A P TOT (1) Total dissipation at Tc = 25 °C 80 W TJ Pstg Operating junction temperature storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-c Thermal resistance junction-case 1.88 °C/W Rthj-a (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Thermal resistance junction-ambient 62.5 Table 4. Avalanche characteristics Symbol Parameter Value Unit IAV Avalanche current, repetitive or not-repetitive (pulse width limited by maximum junction temperature) 38.5 A EAS Single pulse avalanche energy (TJ = 25 °C, ID = IAV, VDD = 43 V) 152 mJ |
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