GaN Wideband 50 W Pulsed Transistor in Plastic Package

DC - 3.5 GHz

Rev. V3

MAGX-000035-05000P

1

11

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Visit www.macomtech.com for additional data sheets and product information.

For further information and support please visit:

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Features

 GaN on SiC D-Mode Transistor Technology

 Unmatched, Ideal for Pulsed Applications

 50 V Typical Bias, Class AB

 Common-Source Configuration

 Thermally-Enhanced 3 x 6 mm 14-Lead DFN

 Halogen-Free “Green” Mold Compound

 RoHS* Compliant and 260°C Reflow Compatible

 MSL-1

Description

The MAGX-000035-05000P is a GaN on SiC

unmatched power device offering the widest RF

frequency capability, most reliable high voltage

operation, lowest overall power transistor size, cost

and weight in a “TRUE SMT” plastic-packaging

technology.

Use of an internal stress buffer technology allows

reliable operation at junction temperatures up to

200°C. The small package size and excellent RF

performance make it an ideal replacement for costly

flanged or metal-backed module components.

Pin No.

Function

Pin No.

Function

1

No Connection

8

No Connection

2

No Connection

9

No Connection

3

10

4

11

5

12

6

No Connection

13

No Connection

7

No Connection

14

No Connection

15

Part Number

Package

MAGX-000035-05000P

Bulk Packaging

MAGX-000035-0500TP

250 Piece Reel

MAGX-000035-PB2PPR

Sample Board

* Restrictions on Hazardous Substances, European Union

Directive 2002/95/EC.

Functional Schematic

NC NC

NC NC

NC NC

NC NC

1

2

3

4

5

6

7

14

13

12

11

10

9

8

15

G

G

G

D

D

D

1. Reference Application Note M513 for reel size information.

2. When ordering sample evaluation boards, choose a standard

frequency range indicated on page 4 or specify a desired

custom range. Custom requests may increase lead times.

3. MACOM recommends connecting unused package pins to

ground.

4. The exposed pad centered on the package bottom must be

connected to RF and DC ground.