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MC-4R128FKE8D-840 Datasheet(PDF) 1 Page - Elpida Memory

Part # MC-4R128FKE8D-840
Description  Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 18-BIT)
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

MC-4R128FKE8D-840 Datasheet(HTML) 1 Page - Elpida Memory

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Elpida Memory,Inc. 2002
MOS INTEGRATED CIRCUIT
MC-4R128FKE8D-840
Direct Rambus DRAM RIMM
TM Module
128M-BYTE (64M-WORD x 18-BIT)
DATA SHEET
Document No. E0266N10 (Ver 1.0)
Date Published April 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R128FKE8D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (
µPD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
• 184 edge connector pads with 1mm pad spacing
• 128 MB Direct RDRAM storage
• Each RDRAMhas 32 banks, for 128 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support


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