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HM5225165BTT-75 Datasheet(PDF) 1 Page - Elpida Memory |
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HM5225165BTT-75 Datasheet(HTML) 1 Page - Elpida Memory |
1 / 63 page Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM E0082H10 (1st edition) (Previous ADE-203-1073B (Z)) Jan. 31, 2001 Description The HM5225165B is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225805B is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225405B is a 256-Mbit SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II. Features • 3.3 V power supply • Clock frequency: 133 MHz/100 MHz (max) • LVTTL interface • Single pulsed RAS • 4 banks can operate simultaneously and independently • Burst read/write operation and burst read/single write operation capability • Programmable burst length: 1/2/4/8 • 2 variations of burst sequence Sequential (BL = 1/2/4/8) Interleave (BL = 1/2/4/8) • Programmable CAS latency: 2/3 |
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