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HGT1S7N60C3DS Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # HGT1S7N60C3DS
Description  14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGT1S7N60C3DS Datasheet(HTML) 4 Page - Fairchild Semiconductor

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HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B
1
www.fairchildsemi.com
4
Typical Performance Curves
Figure 1.
VGE, GATE TO EMITTER VOLTAGE (V)
46
8
10
12
0
5
10
20
25
30
35
14
15
40
PULSE DURATION = 250
µs
DUTY CYCLE <0.5%, VCE = 10V
TC = 25oC
TC = -40oC
TC = 150oC
TRANSFER CHARACTERISTICS
Figure 2.
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
246
8
10
5
10
15
12.0V
8.5V
9.0V
8.0V
7.0V
VGE = 15.0V
20
25
30
35
40 PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
TC = 25oC
10.0V
7.5V
SATURATION CHARACTERISTICS
Figure 3.
0
15
01
2
3
4
5
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC = 150oC
TC = 25oC
TC = -40oC
5
10
25
35
40
30
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250
µs
COLLECTOR TO EMITTER ON-STATE
VOLTAGE
Figure 4.
0
15
0
123
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC = 25oC
TC = -40oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250
µs
5
10
20
25
30
35
40
COLLECTOR TO EMITTER ON-STATE
VOLTAGE
Figure 5. MAXIMUM DC COLLECTOR CURRENT
vs CASE TEMPERATURE
25
50
75
100
125
150
0
3
6
9
12
15
TC, CASE TEMPERATURE (oC)
VGE = 15V
Figure 6.
60
80
120
10
11
12
VGE, GATE TO EMITTER VOLTAGE (V)
14
15
13
140
100
40
ISC
tSC
10
12
VCE = 360V, RG = 50Ω, TJ = 125oC
4
6
8
2
SHORT CIRCUIT WITHSTAND TIME


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