GaN Wideband Transistor 28 V, 5 W

DC - 6 GHz

MAGX-011086

3

33

make changes to the product(s) or information contained herein without notice.

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ADVANCE: Data Sheets contain information regarding a product MACOM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product MACOM has under

development. Performance is based on engineering tests. Specifications are typical. Mechanical

outline has been fixed. Engineering samples and/or test data may be available. Commitment to

produce in volume is not guaranteed.

3. Exceeding any one or combination of these limits may cause permanent damage to this device.

4. MACOM does not recommend sustained operation near these survivability limits.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Nitride Circuits are sensitive to electrostatic

discharge (ESD) and can be damaged by static

electricity. Proper ESD control techniques should

be used when handling these Class 1B devices.

Parameter

Absolute Max.

100 V

-10 to 3 V

4 mA

10.3 W

Junction Case Temperature

+200°C

Operating Temperature

-40°C to +100°C

Storage Temperature

-65°C to +150°C