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MAGX-011086-V1A Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-011086-V1A Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc. |
3 / 4 page GaN Wideband Transistor 28 V, 5 W DC - 6 GHz Advance - Rev. V1A MAGX-011086 3 33 M/A-COM Technology Solutions Inc. (MACOM ) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. For further information and support please visit: https://www.macomtech.com/content/customersupport ADVANCE: Data Sheets contain information regarding a product MACOM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product MACOM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 10 6 hours. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. Parameter Absolute Max. Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 4 mA Power Dissipation, PT 10.3 W Junction Case Temperature +200°C Operating Temperature -40°C to +100°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings3,4,5 |
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