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MAGX-002735-040L00 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-002735-040L00 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1 26 March 12 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 600 years (Channel Temperature < 200°C) Application Civilian and Military Pulsed Radar Product Description The MAGX-002735-040L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002735-040L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance Freq (MHz) Pin (W Peak) Pout (W Peak) Gain (dB) Id-Pk (A) Eff (%) 2700 4 44 10.4 1.7 53 3100 4 46 10.6 1.7 54 3500 4 42 10.2 1.5 55 2900 4 44 10.5 1.6 56 2800 4 45 10.5 1.7 53 3000 4 43 10.3 1.7 51 3400 4 43 10.3 1.5 55 3300 4 47 10.7 1.7 57 3200 4 47 10.7 1.7 54 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.5 GHz, Pulse=300us, Duty=10%. Ordering Information MAGX-002735-040L00 40W GaN Power Transistor MAGX-002735-SB0PPR Evaluation Fixture |
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