GaN on SiC HEMT Pulsed Power Transistor

250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty

MAGX-001214-250L00

Production V1

18 Aug 11

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

4

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

RF Power Transfer Curve (Output Power Vs. Input Power)

RF Power Transfer Curve (Drain Efficiency Vs. Output Power)

50

100

150

200

250

300

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

Pin (W)

1200 MHz

1300 MHz

1400 MHz

35

40

45

50

55

60

65

70

100

125

150

175

200

225

250

275

300

Pout (W)

1200 MHz

1300 MHz

1400 MHz