FZT689B datasheet(2/2 Pages) FAIRCHILD

Part #	FZT689B

Description	SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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SOT223 NPN SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Gain of 400 at IC=2 Amps and low saturation voltage

* Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A

APPLICATIONS

* Darlington replacement

* Flash gun convertors and Battery powered circuits

PARTMARKING DETAIL -

FZT689B

COMPLEMENTARY TYPE -

FZT789B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

8A

Continuous Collector Current

IC

3A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltage

Collector-Base

Collector-Emitter

V(BR)CBO

20

V

IC=100µA

V(BR)CEO

20

V

IC=10mA*

Emitter-Base

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Current

ICBO

0.1

µ

A

VCB=16V

Emitter Cut-Off Current

IEBO

0.1

µ

A

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.10

0.50

0.45

V

IC=0.1A, IB=0.5mA*

IC=2A, IB=10mA*

IC=3A, IB=20mA*

Base-EmitterSaturationVoltage VBE(sat)

0.9

V

IC=1A, IB=10mA*

Base-Emitter

Turn-On Voltage

VBE(on)

0.9

V

IC=1A, VCE=2V*

Static Forward

Current Transfer

Ratio

hFE

500

400

150

IC=0.1A, VCE=2V*

IC=2A, VCE=2V*

IC=6A, VCE=2V*

Transition Frequency

fT

150

MHz

IC=50mA, VCE=5V

f=50MHz

Input Capacitance

Cibo

200

pF

VEB=0.5V, f=1MHz

Output Capacitance

Cobo

16

pF

VCB=10V, f=1MHz

Switching Times

ton

toff

30

800

ns

IC=500mA,IB1=50mA

IB2=50mA, VCC=10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT689B

C

E

B

3 - 220

3 - 219

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01

0.1

1

10

0.4

0.2

0

0.8

0.6

0.01

0.1

1

10

0.4

0.2

0

0.8

0.6

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

VCE(sat) v IC

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

I+ -

Collector Current (Amps)

VBE(on) v IC

VCE=2V

1.5K

1K

500

Tamb=25°C

IC/IB=10

IC/IB=200

IC/IB=100

-55°C

+25°C

+100°C

+175°C

0

-55°C

+25°C

+100°C

+175°C

IC/IB=100

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

10

100

1s

DC

100ms

10ms

100µs

1ms

1

0.01

0.1

10

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