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NE3513M04 Datasheet(PDF) 3 Page - California Eastern Labs

Part # NE3513M04
Description  N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE3513M04 Datasheet(HTML) 3 Page - California Eastern Labs

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NE3513M04
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3
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0
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R
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0
1
0
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8
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Oct 18, 2011
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Ambient Temperature TA (°C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
125
100
50
0
50
100 125 150
200
250
Gate to Source Voltage VGS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2 V
60
50
40
30
20
10
0–0.8
–0.6
–0.4
–0.2
0
Drain Current ID (mA)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
f = 12 GHz
VDS = 2 V
6
8
10
12
14
4
2
16
0
NFmin
Ga
1.2
1.4
1.6
0.6
0.8
1.0
0.2
0.4
0.0
0
3
0
25
20
15
10
5
Drain to Source Voltage VDS (V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
VGS = 0 V
–0.3 V
–0.1 V
–0.4 V
60
50
40
30
20
10
0
0.00
1.00
2.00
3.00
4.00
–0.2 V
Frequency f (GHz)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
NFmin
Ga
VDS = 2 V
ID = 6 mA
1.2
1.0
1.1
0.6
0.7
0.8
0.9
0.3
0.4
0.5
0.1
0.2
0.0
24
20
22
6
8
10
12
14
18
4
2
16
0
0246 8 10 12 14 16 18 20
Frequency f (GHz)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
NFmin
Ga
VDS = 2 V
ID = 10 mA
1.2
1.0
1.1
0.6
0.7
0.8
0.9
0.3
0.4
0.5
0.1
0.2
0.0
24
20
22
6
8
10
12
14
18
4
2
16
0
0246 8 10 12 14 16 18 20
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.


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