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NX6350EP Datasheet(PDF) 5 Page - California Eastern Labs

Part # NX6350EP
Description  LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NX6350EP Datasheet(HTML) 5 Page - California Eastern Labs

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NX6350EP Series
Chapter Title
R08DS0066EJ0100 Rev.1.00
Page 5 of 5
Aug 14, 2012
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
SEMICONDUCTOR LASER
Warning
Laser Beam
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
A Business Partner of Renesas Electronics Corporation.


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