SI7635DP datasheet(2/9 Pages) VISHAY

Part #	SI7635DP

Description	P-Channel 20-V (D-S) MOSFET

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Document Number: 65021

S11-1141-Rev. B, 13-Jun-11

Vishay Siliconix

Si7635DP

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

ΔVDS/TJ

ID = - 250 µA

- 15

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

4.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 2.2

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 10 V

- 30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 26 A

0.0040

0.0049

Ω

VGS = - 4.5 V, ID = - 21 A

0.0060

0.0075

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 26 A

58

S

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

4595

pF

Output Capacitance

Coss

910

Reverse Transfer Capacitance

Crss

813

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 10 V, ID = - 20 A

95.3

143

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A

46.5

70

Gate-Source Charge

Qgs

13.7

Gate-Drain Charge

Qgd

12.5

Gate Resistance

Rg

f = 1 MHz

0.4

1.9

3.8

Ω

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 Ω

ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω

19

30

ns

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

65

98

Fall Time

tf

13

20

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 Ω

ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω

55

83

Rise Time

tr

52

78

Turn-Off Delay Time

td(off)

53

80

Fall Time

tf

25

38

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 40

A

Pulse Diode Forward Currenta

ISM

- 70

Body Diode Voltage

VSD

IS = - 1 A

- 0.74

- 1.1

V

Body Diode Reverse Recovery Time

trr

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

42

63

ns

Body Diode Reverse Recovery Charge

Qrr

25

38

nC

Reverse Recovery Fall Time

ta

12

ns

Reverse Recovery Rise Time

tb

30

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