DMN63D8LDW-13 datasheet(3/6 Pages) DIODES

Part #	DMN63D8LDW-13

Description	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 6 page

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2

3 of 6

www.diodes.com

November 2012

DMN63D8LDW

0

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0.8

01

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

DS

V= 2.0V

GS

V= 2.5V

GS

V= 3.0V

GS

V= 4.0V

GS

V= 4.5V

GS

V

= 10.0V

GS

0

0.1

0.2

0.3

0.4

0.5

0.6

01

2

3

4

5

V

, GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

V

= 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

1

2

3

4

5

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

V

= 2.5V

GS

V

= 4.5V

GS

V

= 10V

GS

1.5

2.5

3.5

4.5

0

5

10

15

20

1.0

2.0

3.0

4.0

5.0

V

, GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

I = 250mA

D

I = 100mA

D

I= 10mA

D

0

2

4

6

8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

10

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J

°

0.6

0.8

1.0

1.2

1.4

1.6

V

= 4.0V

I = 200mA

GS

D

V=

V

I = 300mA

GS

D

5.0

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