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EL5410CR Datasheet(PDF) 2 Page - Elantec Semiconductor |
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EL5410CR Datasheet(HTML) 2 Page - Elantec Semiconductor |
2 / 14 page 2 EL5210C/EL5410C 30MHz Rail-to-Rail Input-Output Op Amps Absolute Maximum Ratings (T A = 25°C) Values beyond absolute maximum ratings can cause the device to be pre- maturely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Supply Voltage between VS+ and VS- +18V Input Voltage VS- - 0.5V, VS +0.5V Maximum Continuous Output Current 30mA Maximum Die Temperature +125°C Storage Temperature -65°C to +150°C Operating Temperature -40°C to +85°C Power Dissipation See Curves ESD Voltage 2kV Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Characteristics VS+ = +5V, VS - = -5V, RL = 1k Ω and CL = 12pF to 0V, TA = 25°C unless otherwise specified. Parameter Description Condition Min Typ Max Unit Input Characteristics VOS Input Offset Voltage VCM = 0V 3 15 mV TCVOS Average Offset Voltage Drift [1] 7µV/°C IB Input Bias Current VCM = 0V 2 60 nA RIN Input Impedance 1G Ω CIN Input Capacitance 2pF CMIR Common-Mode Input Range -5.5 +5.5 V CMRR Common-Mode Rejection Ratio for VIN from -5.5V to 5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ 4.5V 65 80 dB Output Characteristics VOL Output Swing Low IL = -5mA -4.9 -4.8 V VOH Output Swing High IL = 5mA 4.8 4.9 V ISC Short Circuit Current ±120 mA IOUT Output Current ±30 mA Power Supply Performance PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V 60 80 dB IS Supply Current (Per Amplifier) No Load 2.5 3.75 mA Dynamic Performance SR Slew Rate [2] -4.0V ≤ VOUT ≤ 4.0V, 20% o 80% 33 V/µ s tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns BW -3dB Bandwidth 30 MHz GBWP Gain-Bandwidth Product 20 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain [3] RF = RG = 1k Ω and VOUT = 1.4V 0.12 % dP Differential Phase[3] RF = RG = 1k Ω and VOUT = 1.4V 0.17 ° 1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used |
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