Document Number: 91028

www.vishay.com

S11-1046-Rev. D, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRF620S, SiHF620S

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Simple Drive Requirements

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

200

0.80

14

3.0

7.9

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF620S-GE3

Lead (Pb)-free

IRF620SPbF

SiHF620S-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

200

V

Gate-Source Voltage

± 20

Continuous Drain Current

5.2

A

3.3

18

Linear Derating Factor

0.40

W/°C

0.025

110

mJ

5.2

A

5.0

mJ

Maximum Power Dissipation

50

W

3.0

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply