 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
EL2360C Datasheet(PDF) 11 Page - Elantec Semiconductor |
|
||||||||||||||||||||||||||||||
EL2360C Datasheet(HTML) 11 Page - Elantec Semiconductor |
|
|
11 / 16 page  EL2360C Triple 130 MHz Current Feedback Amplifier Applications Information Product Description The EL2360C is a triple current feedback ampli- fier that offers wide bandwidth and good video specifications at moderately low supply currents It is built using Elantec’s proprietary compli- mentary bipolar process and is offered in both a 16 pin PDIP and SOIC packages Due to the cur- rent feedback architecture the EL2360C clo- sedbloop b3 dB bandwidth is dependent on the value of the feedback resistor First the desired bandwidth is selected by choosing the feedback resistor RF and then the gain is set by picking a gain resistor RG The curves at the beginning of the Typical Performance Curves section show the effect of varying both RF and RG The b3dB bandwidth is somewhat dependent on the power supply voltage As the supply voltage is de- creased internal junction capacitances increase causing a reduction in the closed loop bandwidth To compensate for this smaller values of feed- back resistor can be used at lower supply volt- ages Power Supply Bypassing and Printed Circuit Board Layout As with any high-frequency device good printed circuit board layout is necessary for optimum performance Ground plane construction is high- ly recommended Lead lengths should be as short as possible preferably below ’’ The power sup- ply pins must be well bypassed to reduce the risk of oscillation The combination of a 10 mF tanta- lum capacitor in parallel with a 001 mF ceramic capacitor has been shown to work well when placed at each supply pin For good AC performance parasitic capacitance should be kept to a minimum especially at the inverting input (see the Capacitance at the In- verting Input section) This implies keeping the ground plane away from this pin Carbon or Met- al-Film resistors are acceptable with the Metal- Film resistors giving slightly less peaking and bandwidth because of their additional series in- ductance Use of sockets particularly for the SO package should be avoided if possible Sockets add parasitic inductance and capacitance which will result in some additional peaking and over- shoot Capacitance at the Inverting Input Any manufacturer’s high-speed voltage- or cur- rent-feedback amplifier can be affected by stray capacitance at the inverting input The character- istic curve of gain vs frequency with variations in CINb emphasizes this effect The curve illus- trates how the bandwidth can be extended to be- yond 200 MHz with some additional peaking with an additional 2pF of capacitance at the VINb pin For inverting gains this parasitic ca- pacitance has little effect because the inverting input is a virtual ground but for non-inverting gains this capacitance (in conjunction with the feedback and gain resistors) creates a pole in the feedback path of the amplifier This pole if low enough in frequency has the same destabilizing effect as a zero in the forward open-loop re- sponse The use of large value feedback and gain resistors further exacerbates the problem by fur- ther lowering the pole frequency Feedback Resistor Values The EL2360C has been designed and specified at a gain of a2 with RF e 560X This value of feedback resistor yields relatively flat frequency response with little to no peaking out to 130 MHz Since the EL2360C is a current-feedback amplifier it is also possible to change the value of RF to get more bandwidth As seen in the curve of Frequency Response For Various RF and RG bandwidth and peaking can be easily modified by varying the value of the feedback resistor For example by reducing RF to 430X bandwidth can be extended to 170 MHz with un- der 1 dB of peaking Further reduction of RF to 360 X increases the bandwidth to 195 MHz with about 25 dB of peaking Bandwidth vs Temperature Whereas many amplifier’s supply current and consequently b3 dB bandwidth drop off at high temperature the EL2360C was designed to have little supply current variation with temperature An immediate benefit from this is that the b3 dB bandwidth does not drop off drastically with temperature With VS e g15V and AV ea2 the bandwidth varies only from 150 MHz to 110 MHz over the entire die junction temperature range of b50 C k T k 150 C 11 |
Similar Part No. - EL2360C |
|
Similar Description - EL2360C |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
