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NX6342EP Datasheet(PDF) 4 Page - California Eastern Labs

Part # NX6342EP
Description  1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NX6342EP Datasheet(HTML) 4 Page - California Eastern Labs

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NX6342EP
Chapter Title
R08DS0050EJ0100 Rev.1.00
Page 4 of 5
Jan 19, 2012
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Optical Output Power
PO
15
mW
Forward Current of LD
IF
120
mA
Reverse Voltage of LD
VR
2.0
V
Forward Current of PD
IF
10.0
mA
Reverse Voltage of PD
VR
15
V
Operating Case Temperature
TC
−5 to +85
°C
Storage Temperature
Tstg
−40 to +95
°C
Lead Soldering Temperature
Tsld
350 (3 sec.)
°C
Relative Humidity (noncondensing)
RH
85
%
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Bias Current
Ibias
TC = 25
°C
30
mA
ELECTRO-OPTICAL CHARACTERISTICS
(TC =
−5 to +85°C, CW, BOL, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Signalling Rate
10.3125
Gb/s
Optical Output Power
PO
8.5
mW
Operating Voltage
Vop
PO = 8.5 mW
2.0
V
Threshold Current
Ith
TC = 25
°C
8
15
mA
30
Differential Efficiency
ηd
PO = 8.5 mW, TC = 25
°C
0.23
W/A
PO = 8.5 mW
0.13
Peak Emission Wavelength
λp
PO = 8.5 mW
1 290
1 330
nm
Side Mode Suppression Ratio
SMSR
PO = 8.5 mW
35
dB
Rise Time
tr
20-80%
*1
50
ps
Fall Time
tf
80-20%
*1
50
ps
Monitor Current
Im
VR = 1.5 V, PO = 8.5 mW
100
1 000
μA
Monitor Dark Current
ID
VR = 3.3 V, TC = 25
°C
10
nA
VR = 3.3 V
100
Monitor PD Terminal
Capacitance
Ct
VR = 3.3 V, f = 1 MHz
20
pF
Tracking Error
*2
γ
Im = const. (@PO = 8.5 mW,
TC = 25
°C)
−0.9
0.9
dB
Note: 1. 10.3125 Gb/s, PRBS 2
31 − 1, NRZ, Duty Cycle = 50%
2. Tracking Error:
γ
0
Im
Im
TC = 25
°C
TC = –5 to +85
°C
Po
(mW)
Po
8.5
(mA)
γ = 10 log
[dB]
Po
8.5
A Business Partner of Renesas Electronics Corporation.


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