EL2227CS-T13 datasheet(3/15 Pages) ELANTEC

Part #	EL2227CS-T13

Description	Dual Very Low Noise Amplifier

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Manufacturer	ELANTEC [Elantec Semiconductor]

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EL2227C

Dual Very Low Noise Amplifier

Electrical Characteristics

VS+= +5V, VS - = -5V, RL = 500Ω and CL = 3pF to 0V, RF = 620Ω & TA = 25°C unless otherwise specified.

Parameter

Description

Condition

Min

Typ

Max

Unit

Input Characteristics

VOS

Input Offset Voltage

VCM = 0V

0.2

3

mV

TCVOS

Average Offset Voltage Drift

[1]

-0.6

µV/°C

IB

Input Bias Current

VCM = 0V

-9

-3.7

µA

RIN

Input Impedance

7.3

M

Ω

CIN

Input Capacitance

1.6

pF

CMIR

Common-Mode Input Range

-4.8

3.4

V

CMRR

Common-Mode Rejection Ratio

for VIN from -4.8V to 3.4V

60

97

dB

AVOL

Open-Loop Gain

-5V

≤ VOUT ≤ 5V

70

84

dB

en

Voltage Noise

f = 100kHz

1.9

nV/

√Hz

in

Current Noise

f = 100kHz

1.2

pA/

√Hz

Output Characteristics

VOL

Output Swing Low

RL = 500Ω

-3.8

-3.5

V

RL = 250Ω

-3.7

-3.5

V

VOH

Output Swing High

RL = 500Ω

3.5

3.7

V

RL = 250Ω

3.5

3.6

V

ISC

Short Circuit Current

RL = 10Ω

60

100

mA

Power Supply Performance

PSRR

Power Supply Rejection Ratio

VS is moved from ±2.25V to ±12V

65

95

dB

IS

Supply Current (Per Amplifier)

No Load

4.5

5.5

mA

VS

Operating Range

±2.5

±12

V

Dynamic Performance

SR

Slew Rate

[2]

±2.5V square wave, measured 25%-75%

35

45

V/µS

tS

Settling to 0.1% (AV = +2)

(AV = +2), VO = ±1V

77

ns

BW

-3dB Bandwidth

RF = 358Ω

90

MHz

HD2

2nd Harmonic Distortion

f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω

98

dBc

f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω

90

dBc

HD3

3rd Harmonic Distortion

f = 1MHz, VO = 2VP-P, RL = 500Ω, RF = 358Ω

94

dBc

f = 1MHz, VO = 2VP-P, RL = 150Ω, RF = 358Ω

79

dBc

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