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NE3521M04-T2B Datasheet(PDF) 2 Page - California Eastern Labs

Part # NE3521M04-T2B
Description  N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE3521M04-T2B Datasheet(HTML) 2 Page - California Eastern Labs

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NE3521M04
R09DS0058EJ0100 Rev.1.00
Page 2 of 8
Mar 19, 2013
RECOMMENDED OPERATING RANGE (TA = +25
°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
ID
3
10
15
mA
Input Power
Pin
–
–
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = –3.0 V
–
0.5
10
μA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
25
45
70
mA
Gate to Source Cut-off Voltage
VGS (off)
VDS = 2 V, ID = 100 μA
–0.2
–0.7
–1.3
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
50
–
–
mS
Noise Figure
NF
–
0.85
1.2
dB
Associated Gain
Ga
VDS = 2 V, ID = 10 mA, f = 20 GHz
9
11
–
dB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25
°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Reference Value
Unit
Noise Figure
NF
0.9
dB
Associated Gain
Ga
VDS = 2 V, ID = 6 mA, f = 20 GHz
10.5
dB
A Business Partner of Renesas Electronics Corporation.


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