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NE5550279A
R09DS0033EJ0200 Rev.2.00
Page 2 of 7
Jul 04, 2012
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
−
7.5
9.0
V
Gate to Source Voltage
VGS
1.65
2.20
2.85
V
Drain Current
IDS
−
0.4
−
A
Input Power
Pin
f = 460 MHz, VDS = 7.5 V
−
15
20
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Gate to Source Leakage Current
IGSS
VGS = 6.0 V
−
−
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 25 V
−
−
10
μA
Gate Threshold Voltage
Vth
VDS = 7.5 V, IDS = 1.0 mA
1.15
1.65
2.25
V
Drain to Source Breakdown Voltage
BVDSS
IDS = 10 μA
25
38
−
V
Transconductance
Gm
VDS = 7.5 V, IDS = 140±20 mA
0.36
0.44
0.58
S
Thermal Resistance
Rth
Channel to Case
−
20.0
−
°C/W
RF Characteristics
Output Power
Pout
f = 460 MHz, VDS = 7.5 V,
31.5
33.0
−
dBm
Drain Current
IDS
Pin = 15 dBm,
−
0.38
−
A
Power Drain Efficiency
η
d
IDset = 40 mA (RF OFF)
−
70
−
%
Power Added Efficiency
η
add
−
68
−
%
Linear Gain
GL
Note
−
22.5
−
dB
Note: Pin = 0 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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