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EL2004MIL Datasheet(PDF) 7 Page - Elantec Semiconductor |
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EL2004MIL Datasheet(HTML) 7 Page - Elantec Semiconductor |
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7 / 16 page  EL2004EL2004C 350 MHz FET Buffer Applications Information The EL2004 is one member of a family of high performance buffers manufactured by Elantec The 2004 is optimized for speed while others offer choices of input DC parameters or output drive or cost The following table illustrates those members available at the time of this printing Consult the factory for the latest capabilities in this developing line Elantec’s Buffer Family Slew Bandwidth Input Peak Rise Part Rate MHz Current IOUT Time V ms (Warm) mA ns ELH0002 200 50 6 mA 400 7 ELH0033 1500 100 25 nA 250 29 EL2004 2500 350 25 nA 250 10 EL2005 1500 140 01 nA 250 25 Recommended Layout Precautions The very high-speed performance of the EL2004 can only be realized by taking certain precau- tions in circuit layout and power supply decou- pling Low inductance ceramic chip or disc power supply decoupling capacitors of 01 mF or more should be connected with the shortest practical lead lengths between the device supply leads and a ground plane In addition it can be helpful to parallel these with 47 mF electrolytics (Tanta- lum preferred) Failure to follow these precau- tions can result in oscillation Circuit Operation The EL2004 is effectively an ideal unity gain am- plifier with almost infinite input impedance and about 6 X output impedance Input Characteristics The input impedance of a junction FET is a strong function of temperature and input volt- age Nominal input resistance of EL2004 is 1012 at 25 C junction but as IB doubles every 11 Cin the JFET the input resistance falls During warm-up self-heating raises the junction temper- ature up to 60 C or more (without heatsink) so operating IB will be much higher than the data sheet 25 C specification Another factor which can increase bias current is input voltage If the input voltage is more than 20V below the positive supply the input current rises exponentially (See Curve) Input Bias Current vs Temperature Input Voltage Input Bias Current vs 2004 – 9 In applications such as sample and hold circuits where it is important to maintain low input bias current over input voltage range the EL2005 High Accuracy Fast Buffer is recommended The input capacitance of EL2004 comprises the FET device gate-to-source capacitance (which is a function of input voltage) and stray capaci- tance to the case Effective input capacitance can be minimized by connecting the case to the out- put since it is electrically isolated Or for reduced radiation the case may be grounded The AC characteristics specified in this data sheet were obtained with the case floating Offset Voltage Adjustment The EL2004’s offset voltages have been actively laser trimmed at g15V supplies to meet specified limits when the offset adjust pin is shorted to the offset preset pin If external offset null is re- quired the offset adjust pin should be connected to a 200 X trim pot connected to the negative sup- ply 7 |
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