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EL2002ACN Datasheet(PDF) 7 Page - Elantec Semiconductor |
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EL2002ACN Datasheet(HTML) 7 Page - Elantec Semiconductor |
7 / 12 page EL2002C Low Power 180 MHz Buffer Amplifier Burn-In Circuit 2002 – 10 Simplified Schematic 2002 – 11 Application Information The EL2002 is a monolithic buffer amplifier built on Elantec’s proprietary Complementary Bipolar process that produces NPN and PNP transistors with essentially identical DC and AC character- istics The EL2002 takes full advantage of the complementary process with a unique circuit topology Elantec has applied for two patents based on the EL2002’s topology The patents relate to the base drive and feedback mechanism in the buffer This feedback makes 2000 V ms slew rates with 100X loads possible with very low supply current Power Supplies The EL2002 may be operated with single or split supplies with total voltage difference between 10V (g5V) and 36V (g18V) It is not necessary to use equal split value supplies For example b 5V and a12V would be excellent for signals from b2V to a9V Bypass capacitors from each supply pin to ground are highly recommended to reduce supply ringing and the interference it can cause At a minimum 1 mF tantalum capacitor with short leads should be used for both supplies Input Characteristics The input to the EL2002 looks like a resistance in parallel with about 35 pF in addition to a DC bias current The DC bias current is due to the miss-match in beta and collector current between the NPN and PNP transistors connected to the input pin The bias current can be either positive or negative The change in input current with in- put voltage (RIN) is affected by the output load beta and the internal boost RIN can actually ap- pear negative over portions of the input range typical input current curves are shown in the characteristic curves Internal clamp diodes from the input to the output are provided These di- odes protect the transistor base emitter junctions and limit the boost current during slew to avoid saturation of internal transistors The diodes be- gin conduction at about g25V input to output differential When that happens the input resist- ance drops dramatically The diodes are rated at 50 mA When conducting they have a series re- sistance of about 20 X There is also 100X in series with the input that limits input current Above g 75V differential input to output additional se- ries resistance should be added Source Impedance The EL2002 has good input to output isolation When the buffer is not used in a feedback loop capacitive and resisitive sources up to 1 MHz present no oscillation problems Care must be used in board layout to minimize output to input coupling CAUTION When using high source impedances (RS l 100 kX) significant gain er- rors can be observed due to output offset load resistor and the action of the boost circuit See typical performance curves 7 |
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