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STT3922N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT3922N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page STT3922N 4.1A, 20V, RDS(ON) 47mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 22-Jun-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordless telephones. FEATURES Low on-resistance Low drive current Low RDS(on) Provides Higher Efficiency and Extends Battery Life Fast switching speed High performance trench technology PACKAGE INFORMATION Package MPQ Leader Size TSOP-6 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 TA= 25°C ID 4.1 A TA= 70°C 3.3 Pulsed Drain Current 2 IDM 8 A Continuous Source Current (Diode Conduction) 1 IS 1.05 A Power Dissipation 1 TA= 25°C PD 1.15 W TA= 70°C 0.7 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 1 t 10 sec ≦ RθJA 110 °C / W Steady State 150 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. G G S S D D REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 2 3 4 5 6 |
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