NX3008PBK

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Product data sheet

Rev. 1 — 1 August 2011

4 of 16

NXP Semiconductors

NX3008PBK

30 V, 230 mA P-channel Trench MOSFET

Fig 1.

Normalized total power dissipation as a

function of junction temperature

Fig 2.

Normalized continuous drain current as a

function of junction temperature

Fig 3.

Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

-75

175

125

25

75

-25

001aao121

40

80

120

(%)

0

-75

175

125

25

75

-25

001aao122

40

80

120

(%)

0

001aao255

-10

-1

-1

-10

(A)

(1)

(2)

(3)

(4)

(5)