NX3008PBK

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 1 August 2011

3 of 16

NXP Semiconductors

NX3008PBK

30 V, 230 mA P-channel Trench MOSFET

5.

Limiting values

[1]

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[3]

Measured between all pins.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

-30

V

gate-source voltage

-8

8

V

drain current

[1] -

-230

mA

[1] -

-145

mA

peak drain current

-

-1

A

total power dissipation

[2] -

350

mW

[1] -

420

mW

-

1140

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1] -

-230

mA

ESD maximum rating

electrostatic discharge voltage

HBM

[3] -

2000

V