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NVD6414AN Datasheet(PDF) 2 Page - ON Semiconductor

Part # NVD6414AN
Description  N-Channel Power MOSFET 100 V, 32 A, 37 m
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVD6414AN Datasheet(HTML) 2 Page - ON Semiconductor

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NTD6414AN, NVD6414AN
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
107
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 100 V
TJ = 25°C
1.0
mA
TJ = 125°C
100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.0
4.0
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
8.3
mV/°C
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 32 A
30
37
mW
Forward Transconductance
gFS
VGS = 5.0 V, ID = 10 A
18
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
1450
pF
Output Capacitance
COSS
230
Reverse Transfer Capacitance
CRSS
95
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 80 V, ID = 32 A
40
nC
Threshold Gate Charge
QG(TH)
1.7
Gate−to−Source Charge
QGS
8.0
Gate−to−Drain Charge
QGD
20
Plateau Voltage
VGP
5.9
V
Gate Resistance
RG
1.9
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
VGS = 10 V, VDD = 80 V,
ID = 32 A, RG = 6.1 W
11
ns
Rise Time
tr
52
Turn−Off Delay Time
td(off)
38
Fall Time
tf
48
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 32 A
TJ = 25°C
0.87
1.2
V
TJ = 125°C
0.76
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 32 A
68
ns
Charge Time
Ta
51
Discharge Time
Tb
16
Reverse Recovery Charge
QRR
195
nC
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.


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