Electronic Components Datasheet Search |
|
NVD5807NT4G Datasheet(PDF) 1 Page - ON Semiconductor |
|
NVD5807NT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 5 1 Publication Order Number: NTD5807N/D NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable − NVD5807N • These Devices are Pb−Free and are RoHS Compliant Applications • CCFL Backlight • DC Motor Control • Class D Amplifier • Power Supply Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS "20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS "30 V Continuous Drain Current (RqJC) (Note 1) Steady State TC = 25°C ID 23 A TC = 100°C 16 Power Dissipation (RqJC) (Note 1) TC = 25°C PD 33 W Pulsed Drain Current tp = 10 ms IDM 45 A Operating Junction and Storage Temperature TJ, Tstg − 55 to 175 °C Source Current (Body Diode) IS 23 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V) EAS 29.4 mJ Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 4.5 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 107 1. Surface−mounted on FR4 board using the minimum recommended pad size. DPAK CASE 369AA (Surface Mount) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 40 V 37 m W @ 4.5 V RDS(on) MAX ID MAX V(BR)DSS 31 m W @ 10 V http://onsemi.com 1 2 3 4 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 1 Gate 2 Drain 3 Source 4 Drain A = Assembly Location* Y = Year WW = Work Week 5807N = Device Code G = Pb−Free Package 23 A G S N−CHANNEL MOSFET D IPAK CASE 369D (Straight Lead DPAK) 1 2 3 4 4 Drain 2 Drain 1 Gate 3 Source 16 A * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. |
Similar Part No. - NVD5807NT4G |
|
Similar Description - NVD5807NT4G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |