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NE425S01-T1B Datasheet(PDF) 1 Page - California Eastern Labs |
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NE425S01-T1B Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 5 page Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX VDS Drain to Source Voltage V 2 3 ID Drain Current mA 10 20 Pin Input Power dBm 0 FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. PART NUMBER NE425S01 PACKAGE OUTLINE S01 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF1 Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 0.60 0.80 GA1 Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 10.5 12.0 gm Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 IDSS Saturated Drain Current, VDS = 2 V, VGS = 0 V mA 20 60 90 VGS(off) Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA V -0.2 -0.7 -2.0 IGSO Gate to Source Leak Current, VGS = -3 V µA 0.5 10 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY ELECTRICAL CHARACTERISTICS (TA = 25°C) Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS (TA = 25°C) PRELIMINARY DATA SHEET 1.0 0.5 0 12 16 20 24 8 4 12 4 6 8 10 14 20 30 VDS = 2 V ID = 10 mA Ga NF California Eastern Laboratories |
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