Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

SYMBOLS

CHARACTERISTICS

UNITS MIN TYP MAX

Drain to Source Voltage

V

2

3

Drain Current

mA

10

20

Input Power

dBm

0

FEATURES

• SUPER LOW NOISE FIGURE:

0.60 dB TYP at 12 GHz

• HIGH ASSOCIATED GAIN:

12.0 dB TYP at f = 12 GHz

• GATE LENGTH:

≤ 0.20 µm

• GATE WIDTH: 200

µm

• LOW COST PLASTIC PACKAGE

C to KU BAND SUPER LOW

NOISE AMPLIFIER N-CHANNEL HJ-FET

NE425S01

DESCRIPTION

The NE425S01 is a Hetero-Junction FET that utilizes the hetero

junction to create high mobility electrons. Its excellent low noise

and high associated gain make it suitable for DBS and other

commercial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

PART NUMBER

NE425S01

PACKAGE OUTLINE

S01

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

dB

0.60

0.80

dB

10.5

12.0

mS

45

60

mA

20

60

90

µA

V

-0.2

-0.7

-2.0

µA

0.5

10

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

Frequency, f (GHz)

RECOMMENDED

PRELIMINARY DATA SHEET

1.0

0.5

0

12

16

20

24

8

4

12

4

6

8

10

14

20

30

Ga

NF

California Eastern Laboratories